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| MMBT3646 MMBT3646 Switching Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCEO VCES VCBO VEBO IC PD TJ, TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Total Device Dissipation - Derate above 25C - Continuous @ TA=25C Value 15 40 40 5 300 625 5 150 mA mW mW/C C Units V V V Operating and Storage Junction Temperature Range Electrical Characteristics TC=25C unless otherwise noted Symbol Off Characteristics V(BR)CES VCEO(SUS) V(BR)CBO V(BR)EBO ICES Parameter Min. 40 15 40 5 0.5 3 30 25 15 120 Typ. Max. Units V V V V A Collector-Emitter Breakdown Voltage (IC = 100Adc, VBE = 0) Collector-Emitter Sustaining Voltage (1) (IC = 10mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 100Adc, IE = 0) Emitter-Base Breakdown Voltage (IE = 100Adc, IC = 0) Collector Cut-off Current (VCE = 20Vdc, VBE = 0) (VCE = 20Vdc, VBE = 0, TA = 65C) DC Current Gain (IC = 30mAdc, VCE = 0.4Vdc) (IC = 100mAdc, VCE = 0.5Vdc) (IC = 300mAdc, VCE = 1Vdc) Collector-Emitter Saturation Voltage (IC = 30mAdc, IB = 3mAdc) (IC = 100mAdc, IB = 10mAdc) (IC = 300mAdc, IB = 30mAdc) (IC = 30mA, IB = 3mA, TA =65C) Base-Emitter Saturation Voltage (IC = 30mAdc, IB = 3mAdc) (IC = 100mAdc, IB = 10mAdc) (IC = 300mAdc, IB = 30mAdc) 0.73 On Characteristics (1) hFE VCE(sat) 0.2 0.28 0.5 0.3 0.95 1.2 1.7 V VBE(sat) V (c)2002 Fairchild Semiconductor Corporation Rev. A1, November 2002 MMBT3646 Electrical Characteristics TC=25C unless otherwise noted) (Continued) Symbol Small-Signal Characteristics Cobo Cibo Parameter Min. Typ. Max. 5 8 Units pF pF Output Capacitance (VCE = 5Vdc, IE = 0, f = 1MHz) Input Capacitance (VEB = 0.5Vdc, IC = 0, f = 1MHz) Turn-On Time Delay Time Rise Time Turn-Off Time Fall Time Storge Time VCC = 10Vdc, IC = 300mAdc, IB1 = IB2 = 30mAdc VCC = 10Vdc, IC = 300mAdc, IB1 = 30mAdc, VCE(off) = 3V Switching Characteristics ton td tr toff tf ts 18 10 15 28 15 20 ns ns ns ns ns ns Thermal Characteristics Symbol RJA RJC Parameter Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Min. Typ. Max. 200 83.3 Units C C (c)2002 Fairchild Semiconductor Corporation Rev. A1, November 2002 MMBT3646 Package Dimensions SOT-23 0.20 MIN 2.40 0.10 0.40 0.03 1.30 0.10 0.45~0.60 0.03~0.10 0.38 REF 0.40 0.03 0.96~1.14 2.90 0.10 0.12 -0.023 +0.05 0.95 0.03 0.95 0.03 1.90 0.03 0.508REF 0.97REF Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. A1, November 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2002 Fairchild Semiconductor Corporation Rev. I1 |
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